N turi 166 mm M6 HJT quyosh batareyasi

N turi 166 mm M6 HJT quyosh batareyasi

Silicon Heterounction Technology (HJT) juda yaxshi tozalangan monokristalli kremniy gofretlarining har ikki tomonida amorf kremniyning (a-Si: H) ultra yupqa qatlamlarining past haroratli o'sishi natijasida hosil bo'lgan emitent va orqa sirt maydoniga (BSF) asoslangan. , qalinligi 160 mkm dan kam va samaradorlik 6,69 vatt/hujayra @ 24,4 foiz.
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Texnik parametrlar

【Mahsulot tavsifi】

Silicon Heterounction Technology (HJT) juda yaxshi tozalangan monokristalli kremniy gofretlarining har ikki tomonida amorf kremniyning (a-Si: H) ultra yupqa qatlamlarining past haroratli o'sishi natijasida hosil bo'lgan emitent va orqa sirt maydoniga (BSF) asoslangan. , qalinligi 160 mkm dan kam, bu erda elektronlar va teshiklar fotogeneratsiyalanadi.


 HJT solar cell structure 400     Profile2

 

                                       

【Jarayon oqimi】


Process flow A black

 

【Asosiy xususiyatlar】

Yuqori samaradorlik va yuqori ovoz

Past harorat koeffitsienti 5-8 foiz quvvat chiqishi

Ikki yuzli tuzilmalar

 

【Asosiy xususiyatlar】

Yuqori samaradorlik va yuqori ovoz

Past harorat koeffitsienti 5-8 foiz quvvat chiqishi

Ikki yuzli tuzilmalar

 

【Texnik ma'lumotlar】

TEXNIK MA'LUMOTLAR VA DIZAYN


HARORAT KOFEFISIENTLARI VA LEHMLANISHLIGI

Hajmi

166mm*166mm±0.25


TkUoc (foiz /K)

-0.192

Qalinligi

150 plyus 20 mkm/-10 mkm


TkIsc (foiz /K)

ortiqcha 0.035

Old

9×0.1mm Payvandlash nuqta tipidagi oldingi elektrod


TkPMAX (foiz /K)

-0.236

Orqaga

9×0.1mm Payvandlash nuqta tipidagi orqa elektrod


Peelning minimal kuchi

>1,4N/mm


STC da ELEKTR PARAMETRLARI

Yo'q.

Samaradorlik (foiz)

Pmpp (Vt)

Uoc (V)

Isc (A)

Umpp (V)

Impp (A)

FF (foiz)

1

24.40

6.69

0.746

10.758

0.644

10.386

83.35

2

24.30

6.66

0.746

10.754

0.644

10.352

83.10

3

24.20

6.63

0.745

10.750

0.643

10.318

82.84

4

24.10

6.61

0.745

10.745

0.643

10.282

82.56

5

24.00

6.58

0.744

10.740

0.642

10.245

82.27

6

23.90

6.55

0.744

10.728

0.642

10.210

82.06

7

23.80

6.52

0.744

10.716

0.641

10.175

81.84

8

23.70

6.50

0.744

10.683

0.642

10.124

81.76

9

23.60

6.47

0.744

10.649

0.642

10.072

81.67

10

23.50

6.44

0.743

10.628

0.640

10.072

81.64

11

23.40

6.41

0.741

10.607

0.637

10.072

81.61

12

23.30

6.39

0.741

10.602

0.635

10.058

81.35

13

23.20

6.36

0.740

10.596

0.633

10.043

81.09

14

23.10

6.34

0.741

10.563

0.635

9.979

80.88

15

23.00

6.31

0.742

10.530

0.636

9.914

80.67

16

22.90

6.28

0.742

10.504

0.635

9.890

80.57

17

22.80

6.25

0.742

10.477

0.634

9.865

80.46

18

22.70

6.23

0.741

10.488

0.632

9.850

80.18

19

22.60

6.20

0.739

10.499

0.630

9.834

79.89

20

22.50

6.17

0.738

10.496

0.629

9.809

79.72

21

22.40

6.14

0.736

10.493

0.628

9.784

79.54

  

【Spektral javob】

 

Spectral Response 4



【Intensivlikka bog'liqlik】


Intensity Dependence 4

  



Issiq teglar: n tipidagi 166 mm m6 hjt quyosh batareyasi, Xitoy, etkazib beruvchilar, ishlab chiqaruvchilar, zavod, Xitoyda ishlab chiqarilgan

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